savantic semiconductor product specification silicon npn power transistors 2SD2015 d escription with to-220f package darlington applications driver for solenoid,relay and motor and general purpose applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 6 v i c collector current 4 a i b base current 0.5 a p c collector dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2015 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 120 v v cesat collector-emitter saturation voltage i c =2a ;i b =2ma 1.5 v v besat base-emitter saturation voltage i c =2a ;i b =2ma 2.0 v i cbo collector cut-off current v cb =150v; i e =0 10 a i ebo emitter cut-off current v eb =6v; i c =0 10 ma h fe dc current gain i c =2a ; v ce =2v 2000 f t transition frequency i c =0.1a ; v ce =12v 40 mhz c ob collector output capacitance f=1mhz;v cb =10v 40 pf switching times t on turn-on time 0.6 s t s storage time 5.0 s t f fall time i c =2.0a i b1 =-i b2 =10ma v cc =40v ,r l =20 a 2.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD2015 package outline fig.2 outline dimensions
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